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NEC'S NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
* OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 * 4 PIN MINI MOLD PACKAGE: NE68939
NE68939
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 39
+0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4)
2.9 0.2
0.95 0.85
2
3 1.9
DESCRIPTION
NEC's NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal device for TX driver stage in a 1.9 GHZ digital cordless telephone (DECT or PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Minimold package and is available on tape and reel. The NE68939 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance.
1 +0.10 0.6 -0.05
4
1) Collector 2) Emitter 3) Base 4) Emitter
+0.2 1.1 -0.1
0.8
0.16 +0.10 -0.06
5 0 to 0.1
5
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PART NUMBER PACKAGE CODE SYMBOLS ICBO IEBO hFE P-1 Gp PARAMETERS Collector Cutoff Current, VCB = 5 V, IE = 0 Emitter Cutoff Current, VEB = 1 V, IC = 0 DC Current Gain, VCE = 3.6 V, IC = 100 mA Output Power Power Gain Collector Efficiency VCE = 3.6 V, f = 1.9 GHZ ICq = 2 mA (Class AB) Duty 1/8 dBm dB % MS 6.5 50 UNITS A A 30 24.5 8 62 10.0 MIN NE68939 39 TYP MAX 2.5 2.5
C
TON
Maximum Device On Time
California Eastern Laboratories
NE68939 ABSOLUTE MAXIMUM RATINGS1 (TA = 25 C)
SYMBOLS VCBO VCEO VEBO IC PT Tj TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current mA Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V 150 mW C C 200 (CW) 150 -65 to +150
1.9
RATINGS 9.0 6.0 2.0
OUTLINE 39 RECOMMENDED P.C.B. LAYOUT
2.4
2
3
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
1 4 1.0
1.0
APPLICATION
(1) TX Amplifier for DECT
+3 dBm Po = 27 dBm
ORDERING INFORMATION
PART NUMBER NE68939-T1-A Note: 1. Lead material: Cu Lead plating: PbSn QTY 3K/REEL
NE68839
NE68939
NE69039
(2) TX Amplifier for PHS
-14 dBm P1 = 22 dBm
ZIN (), ZOUT () DATA
j50
PC2771T
NE68939
NE69039
j25
j100
OUTPUT POWER, COLLECTOR EFFICIENCY, COLLECTOR CURRENT AND POWER GAIN VS. INPUT POWER
30 f = 1.9 GHZ, VCC = 3.6V IC = 1mA (Duty 1/8) 25 Pout 20 C 15 IC 10 GP 5
j10 ZIN 0 0
Collector Efficency, C (%)
ZOUT
Output Power, Pout (dBm)
80
Collector Currents, IC (mA)
-j10
60 40 20 0 8 7 6 5 4
-j25 -j50
-j100
Power Gain, Gp (dB)
30 20 10 0
Z OUT Z IN
5
10
15
20
25
Input Power, Pin (dBm) TYPICAL DATA f = 1.9 GHz, VCC = 3.6 V, ICQ = 1 mA, DUTY = 1/8 P1dB C IC GL 24.5 62 15 9.0 dbm % mA db IMPEDANCE LOOKING INTO DEVICE VCC = 3.6 V, ICQ = I mA, CLASS AB FREQUENCY (GHZ) 1.9 0.9 ZIN () 7.85+j5.62 3.1+j11.6 ZOUT () 21.9-j11.6 5.3-j5.7
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 07/05/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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